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ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
ANHUI CRYSTRO CRYSTAL MATERIALS CO., LTD. INNOVATOR FOR MAGNETO OPTICAL CRYSTALS
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YIG SGGG Substrates Wafer

ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd.
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YIG SGGG Substrates Wafer

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Brand Name : Crystro

Model Number : CR200629-02

Certification : SGS/ROHS

Place of Origin : China

MOQ : 1pc

Payment Terms : T/T, Western Union, MoneyGram, Paypal

Supply Ability : 5000pcs per month

Delivery Time : 4-5weeks

Packaging Details : Transparent clean box

Material : SGGG

Flatness : <1/10 wave at 633nm

Name : Subsituted Gadolinium Gallium Garnet SGGG

Crystal growth method : Czochralski

Orientation : (100), (111) +/-0.5°

Size : 10 mm x 10 mm x 0.5 mm

Diameter Tolerance : ±0.05mm

Length Tolerance : ±0.2mm

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YIG SGGG Substrates Wafer

SGGG single crystal, substituted gadolinium gallium garnet is grown by Czochralski method .

SGGG substrate is excellent for for growing bismuth-substituted iron garnet epitaxial films,is good material for YIG,BiYIG,GdBIG.

Anhui Crystro Crystal Materials Co., Ltd. is specialized in research and development of crystal science and technology, our
business scope mainly concentrated in high-tech crystal materials research and development, manufacture and multidisciplinary solutions. The service industries include: communications, aerospace, automobile, medical, beauty and other industries.

Properties:

Crystal properties
Crystal growth method Czochralski
Crystal growth orientation (100), (111)
Maximum size 3 inch diameter
Variations Dopands on request
Crystallographic properties
Crystallographic structure Cubic
a = 12.383 Å
a = 12.505 Å SGGG
Mineralogical Garnet
Twinning structure Perfect
Colour Colourless / Brownish SGGG
Physical properties
Density 7.09 g/cm3
Melting point 1730 °C
Hardness 7.5 (Mohs)
Dielectric constant 30
Dielectric loss tangent (10 GHz) ca. 3.0 * 10_4
Optical properties
Transmission range 0.3 to 7.0 mm
Refraction index: nd = 1.9708 at 577 nm


CRYSTRO supply GGG crystal with:

Orientation <111> <100> within ±15 arc min
Wave Front Distortion <1/4 wave@632
Diameter Tolerance ±0.05mm
Length Tolerance ±0.2mm
Chamfer 0.10mm@45º
Flatness <1/10 wave at 633nm
Parallelism < 30 arc Seconds
Perpendicularity < 15 arc min
Surface Quality 10/5 Scratch/Dig
Clear Apereture >90%
Large Dimensions of Crystals 2.8-76 mm in diameter

Application:

Substitute GGG

YIG,BIG epitaxy film;

Microwave devices;


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