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6inch Orange Fe Doped LT Lithium Tantalate Wafer High Density

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6inch Orange Fe Doped LT Lithium Tantalate Wafer High Density

Brand Name : Crystro

Model Number : CR220304-02

Certification : SGS/COC

Place of Origin : China

MOQ : 1pc

Price : USD 20~200/pc

Payment Terms : T/T, Western Union, MoneyGram, Paypal

Supply Ability : 20000pcs per month

Delivery Time : 1-4 weeks

Packaging Details : Transparent clean box

Item : Orange Fe Doped LT (Lithium Tantalate) Wafer for High-Density Holographic Information Storage

Lattice constant : a=5.154Å,c=13.783Å

Diameter : 4inch,6inch

Thinckness : 0.2mm,0.35mm,0.5mm

Refractive Indices : no=2.176,ne=2.180(at 0.633 µm) no=2.131,ne=2.134(at 1.2 µm)

Orientation : X-112°Y,36°Y,42°Y±0.5

E-O Coefficient : R33=30.4

Curie Point : 603±2℃

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6inch Orange Fe Doped LT Lithium Tantalate Wafer High Density

Orange Fe Doped LT (Lithium Tantalate) Wafer for High-Density Holographic Information Storage

LiTaO3 Lithium Tantalate (LT) crystal is an important multifunctional crystal material with excellent piezoelectric, ferro-electric, acoustic-optical and electro-opticaleffects.Therefore, it has become a basic functional material in the field of acoustic surface wave (SAW) devices, optical communication, laser, and opto-electronics. Polished LT wafer is widely used in the manufacturing of resonators, filters,transducers and other electronic communication devices, especially for its good mechanical and electrical coupling,temperature coefficient and other comprehensive performance and is used in manufacturing high-frequency acoustic ,surface wave devices, and applied in many mobile phones, intercom, satellite communication, aerospace and other communication fields.

Main Advantages:
High Curie temperature point
Large Thermal power coefficient
Small dielectric constant
Stable chemical and physical properties

6inch Orange Fe Doped LT Lithium Tantalate Wafer High Density


Basic Properties of LiTaO3:

Crystal Structure Trigonal
Lattice constant a=5.154Å,c=13.783Å
Density 7.45g/cm3
Melting Point 1650℃
Curie Point 603±2℃
Mohs Hardness 5.5-6 Mohs
Dielectric Constant es11/eo:39~43, es33/eo:42~43；et11/eo:51~54, et33/eo:43~46
Thermal Conductivity 1015wm
Thermal Expansion Coefficient a1=a2=1.61×10-6/℃, a3=4.1×10-6/℃
Refractive Indices n0=2.176 ne=2.180 @ 633mn
E-O Coefficient R33=30.4
Electro-mechanical coupling factor R15≥0.3
pyroelectric coefficient 2.3×10-7 C/cm2/K
transmission range 400-5000nm


Typical Specifications:

Size Boule or wafer ,Acoustic or Optical grade
Doping Fe, No Doping or With Fe
Boule Length ≥50mm
Wafer Thickness 0.25,0.35,0.50(mm)
Orientation Y42°/Y36°/X/Y/Z or Upon Request
Surface Process Single/Double Sides Polishing
TTV < 10μm
BOW BOW ± (25μm ~40um )
Warp ≤35μm
Flat Width 32.0±2.0(mm) or Upon Request
Roughness Ra≤10Å
Chamfe ≤0.1mm@45°



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